Investigation of the Temperature Coefficients of Perovskite Solar Cells for Application in High-Temperature Environments

被引:0
|
作者
Tobe, Tomoyuki [1 ,2 ]
Shibayama, Naoyuki [1 ]
Nakamura, Yuiga [3 ]
Ikegami, Masashi [1 ]
Kanda, Hiroyuki [4 ]
Miyasaka, Tsutomu [1 ,5 ]
机构
[1] Toin Univ Yokohama, Grad Sch Engn, 1614 Kuroganecho, Yokohama, Kanagawa 2258503, Japan
[2] Kanagawa Inst Ind Sci & Technol KISTEC, Kawasaki Tech Support Dept, Local Independent Adm Agcy, 3-2-1 Sakado, Kawasaki, Kanagawa 2130012, Japan
[3] SPring 8, SPring 8, SPring 8, Sayo, Hyogo 6795198, Japan
[4] Ecole Polytech Fed Lausanne, Grp Mol Engn Funct Mat, CH-1951 Sion, Switzerland
[5] Univ Tokyo, Res Ctr Adv Sci & Technol, Tokyo 1538904, Japan
基金
日本学术振兴会;
关键词
PHOTOVOLTAICS; PERFORMANCE; STABILITY;
D O I
10.1002/asia.202400686
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Perovskite solar cells are actively investigated for their potential as highly efficient and cost-effective photovoltaic devices. However, a significant challenge in their practical application is enhancing their durability. Particularly, these cells are expected to be subjected to heating by sunlight in real-world operating environments. Therefore, high-temperature durability and device operation under such conditions are critical. Our study aims to improve the durability of perovskite solar cells for practical applications by examining their temperature coefficients at elevated temperatures using MA-free compositions. We assessed these coefficients and investigated their correlation with the ideality factor, revealing that carrier recombination markedly affects the temperature behavior of these cells. Our methodology involves simple J-V measurements to evaluate device degradation at high temperatures, paving the way for further research to enhance device performance in such environments. Perovskite solar cells encounter durability challenges at elevated temperatures. This study aims to enhance durability by investigating temperature coefficients and their correlation with the ideality factor. It is found that carrier recombination significantly affects temperature behavior. Simple current-voltage (I-V) measurements are employed to assess device degradation, providing valuable insights for future research on improving performance under high temperatures. image
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页数:5
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