Development of Inductive Energy Storage Pulsed Power Generator Using GaN Power Semiconductor Switches

被引：0
|
作者：
Oneda, Yuki [1 ]
Fujimi, Momo [1 ]
Nagao, Kazuki [1 ]
Sugai, Taichi [2 ]
Tokuchi, Akira [2 ,3 ]
Jiang, Weihua [2 ]
机构：
[1] Natl Inst Technol, Oyama Coll, Oyama, Japan
[2] Nagaoka Univ Technol, Nagaoka, Japan
[3] Pulsed Power Japan Lab Ltd, Kusatsu, Japan
来源：
ELECTRICAL ENGINEERING IN JAPAN | 2025年 / 218卷 / 01期
关键词：
fast current interruption; gallium nitride; inductive energy storage; pulsed power; semiconductor switches; PROTOTYPE;
D O I：
10.1002/eej.23488
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characterizations of pulsed power output for pulsed power generator using GaN FET have been evaluated and compared with using SiC-MOS FET. The fast rise/fall time of output voltage without the dependance on the dummy load has attractive feathers. However, the surge voltage between drain and source terminals, exceeding the maximum rating occurred due to the fast turn-off speed feathers of Gallium nitride (GaN) FET, which has limited the power capability. The inductive energy storage pulsed power generator using GaN FETs as opening switches has developed, and the output obtains a maximum voltage of similar to 900 V with rise/fall time of <20 ns. The fast current interruption characteristics by the turn-off of GaN FET lead to high voltage-pulsed output.
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页数：7
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