Anisotropic quantum transport in a programmable photonic topological insulator

被引:0
|
作者
Ma, Anqi [1 ]
Dai, Tianxiang [1 ]
Mao, Jun [1 ]
Fu, Zhaorong [1 ]
Yang, Yan [2 ]
Hu, Xiaoyong [1 ,3 ,4 ,5 ,6 ]
Gong, Qihuang [1 ,3 ,4 ,5 ,6 ]
Wang, Jianwei [1 ,3 ,4 ,5 ,6 ]
机构
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[3] Peking Univ, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China
[4] Peking Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
[5] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
[6] Hefei Natl Lab, Hefei 230088, Peoples R China
来源
OPTICA | 2024年 / 11卷 / 11期
基金
中国国家自然科学基金;
关键词
Nanocomposites - Optical anisotropy - Photonic devices - Photons - Quantum optics - Topological insulators;
D O I
10.1364/OPTICA.539301
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Quantum transport in materials describes the behavior of particles at the quantum level. Topological materials exhibit nontrivial transport properties with topological invariants, leading to the emergence of protected states that are immune against disorders at the material boundaries. In many real-world materials, especially those with anisotropic crystal structures, the transport properties can vary significantly along different directions within the material bulk. Here, we experimentally observe counterintuitive quantum transport phenomena in anisotropic topological insulators with controllable anisotropy and disorder, implemented on a programmable topological photonic chip. We examine phase transition from the topological phase to the Anderson phase, between which a new quasi-diffusive phase emerges. Anisotropic topological transport demonstrates unconventional superior robustness in the bulk mode compared to the edge mode, in the presence of disorder and loss in realistic systems. Peculiar topological transport with sophisticated gradient anisotropy, emulating stretched topological materials, occurs at the gradient domain wall that can be reconfigured. Our findings provide fresh insights into the intricate interplay between anisotropy within the bulk and robustness at the boundary of topological materials, which could lead to advancements in the field of topological material science and the development of topological devices with tailored functionalities. (c) 2024 Optica Publishing Group under the terms of the
引用
收藏
页码:1533 / 1539
页数:7
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