High-entropy-driven half-Heusler alloys boost thermoelectric performance

被引：8

作者：

Ghosh, Subrata ^{[1
]}

Nozariasbmarz, Amin ^{[1
]}

Lee, Huiju ^{[2
]}

Raman, Lavanya ^{[1
]}

Sharma, Shweta ^{[1
]}

Smriti, Rabeya B. ^{[1
]}

Mandal, Dipika ^{[3
]}

Zhang, Yu ^{[1
]}

Karan, Sumanta K. ^{[1
]}

Liu, Na ^{[1
]}

Gray, Jennifer L. ^{[4
]}

Sanghadasa, Mohan ^{[5
]}

Xia, Yi ^{[2
]}

Priya, Shashank ^{[1
]}

Li, Wenjie ^{[1
]}

Poudel, Bed ^{[1
]}

机构：

[1] Department of Materials Science and Engineering, Pennsylvania State University, University Park, 16802, PA

[2] Department of Mechanical and Materials Engineering, Portland State University, Portland, 97201, OR

[3] Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, 15260, PA

[4] Materials Research Institute, Pennsylvania State University, University Park, 16802, PA

[5] U.S. Army Combat Capabilities Development Command Aviation & Missile Center, Redstone Arsenal, Huntsville, 35898, AL

来源：

Joule | 2024年 / 8卷 / 12期

基金：

美国国家科学基金会;

关键词：

figure of merit; half-Heusler; hardness; high-entropy engineering; point defects; thermoelectric conversion efficiency; thermoelectric effect;

D O I：

10.1016/j.joule.2024.08.008

中图分类号：

学科分类号：

摘要：

High-entropy engineering effectively reduces lattice thermal conductivity (κL) in thermoelectric (TE) materials; however, the chemical complexity of multiple elements in high-entropy materials often leads to phase segregation, limiting their electrical transport properties and overall TE performance. Herein, we report a p-type high-entropy stabilized single-phase half-Heusler alloy, MFeSb, specifically designed to enhance configurational entropy by introducing multiple element species on a single atomic site. This material exhibited low κL due to phonon group velocity reduction and strong phonon scattering from lattice strain generated through distorted lattices while maintaining a high power factor. The material demonstrated a record high figure of merit (zT) of 1.5 at 1,060 K, with an average zT of ∼0.92 over 300–1,060 K. Furthermore, superior conversion efficiencies of 15% and 14% for a single-leg and a unicouple module at a temperature difference of ΔT ∼671 K were achieved. Our findings provide a new avenue for enhancing TE material performance through high-entropy engineering. © 2024 Elsevier Inc.

引用

页码：3303 / 3312

页数：9

共 60 条

[1] Bell L.E., Cooling, Heating, Generating Power, and Recovering Waste Heat with Thermoelectric Systems, Science, 321, pp. 1457-1461, (2008)
[2] Poudel B., Hao Q., Ma Y., Lan Y., Minnich A., Yu B., Yan X., Wang D., Muto A., Vashaee D., Et al., High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys, Science, 320, pp. 634-638, (2008)
[3] Yan Q., Kanatzidis M.G., High-performance thermoelectrics and challenges for practical devices, Nat. Mater., 21, pp. 503-513, (2022)
[4] Xing Y., Liu R., Liao J., Wang C., Zhang Q., Song Q., Xia X., Zhu T., Bai S., Chen L., A Device-to-Material Strategy Guiding the “Double-High” Thermoelectric Module, Joule, 4, pp. 2475-2483, (2020)
[5] Li W., Ghosh S., Liu N., Poudel B., Half-Heusler thermoelectrics: Advances from materials fundamental to device engineering, Joule, 8, pp. 1274-1311, (2024)
[6] Zeier W.G., Schmitt J., Hautier G., Aydemir U., Gibbs Z.M., Felser C., Snyder G.J., Engineering half-Heusler thermoelectric materials using Zintl chemistry, Nat. Rev. Mater., 1, (2016)
[7] Zhou C., Lee Y.K., Yu Y., Byun S., Luo Z.-Z., Lee H., Ge B., Lee Y.-L., Chen X., Lee J.Y., Et al., Polycrystalline SnSe with a thermoelectric figure of merit greater than the single crystal, Nat. Mater., 20, pp. 1378-1384, (2021)
[8] Jiang B., Wang W., Liu S., Wang Y., Wang C., Chen Y., Xie L., Huang M., He J., High figure-of-merit and power generation in high-entropy GeTe-based thermoelectrics, Science, 377, pp. 208-213, (2022)
[9] Jiang B., Yu Y., Cui J., Liu X., Xie L., Liao J., Zhang Q., Huang Y., Ning S., Jia B., Et al., High-entropy-stabilized chalcogenides with high thermoelectric performance, Science, 371, pp. 830-834, (2021)
[10] Fu C., Zhu T., Pei Y., Xie H., Wang H., Snyder G.J., Liu Y., Liu Y., Zhao X., High Band Degeneracy Contributes to High Thermoelectric Performance in p-Type Half-Heusler Compounds, Adv. Energy Mater., 4, (2014)

← 1 2 3 4 5 6 →