Multiphysics Coupling in IGBT Modules: A Review

被引：0

作者：

Tian, Weiqiang ^{[1
]}

Chen, Naichao ^{[1
,2
,3
]}

机构：

[1] Shanghai Univ Elect Power, Sch Energy & Mech Engn, Shanghai 200090, Peoples R China

[2] Shanghai Key Lab Mat Protect & Adv Mat Elect Power, Shanghai 200090, Peoples R China

[3] Shanghai Noncarbon Energy Convers & Utilizat Inst, Shanghai 200240, Peoples R China

来源：

JOURNAL OF ELECTRONIC PACKAGING | 2024年 / 146卷 / 04期

关键词：

IGBT models; multiphysics coupling; failure mechanisms; reliability; MODEL-ORDER REDUCTION; PRESS-PACK IGBTS; MECHANICAL ANALYSIS; POWER; TEMPERATURE; LIFETIME; CONTACTS; BEHAVIOR;

D O I：

10.1115/1.4065941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Since insulated gate bipolar transistor (IGBT) is a core component for power conversion in a power electronic system, guaranteeing the safety of IGBT becomes a crucial task for the maintenance of the power system. However, the mechanism of IGBT failure is a considerably complicated process related to the dynamic process, involving electric, thermal, and mechanical. Hence, understanding the behaviors of IGBT under multiphysics fields coupling plays an important role in the design and reliability studies of IGBT. In this paper, we review the multiphysics coupling effects, namely, electrical-thermal coupling, thermal-mechanical coupling, and mechanical-electrical coupling, inside IGBT modules. The basic principles of each coupling, coupling models, reliability analysis, as well as key issues and development trends are discussed in detail, respectively.

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