Layered NbS2 contacts formed via H2S reaction with Nb for high-performance WSe2-channel p-type transistors

被引：0

作者：

Hori, Koki ^{[1
,2
]}

Chang, Wen Hsin ^{[1
]}

Irisawa, Toshifumi ^{[1
]}

Ogura, Atsushi ^{[2
,3
]}

Okada, Naoya ^{[1
]}

机构：

[1] Semiconductor Frontier Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Tsukuba,305-8568, Japan

[2] Meiji University, Kanagawa, Kawasaki,214-8571, Japan

[3] Meiji Renewable Energy Laboratory (MREL), Meiji University, Kanagawa, Kawasaki,214-8571, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | / 63卷 / 12期

关键词：

D O I：

12SP21

中图分类号：

学科分类号：

摘要：

II-VI semiconductors - III-V semiconductors - Layered semiconductors - Niobium alloys - Selenium compounds - Semiconducting indium phosphide - Transistors - Tungsten compounds

引用