Waveguided Ge/Si Phototransistor With High Responsivity

被引：1

作者：

Li, Xuetong ^{[1
]}

Qu, Huan ^{[1
]}

Li, Yingzhi ^{[1
]}

Liu, Xiaobin ^{[2
]}

Xie, Qijie ^{[2
]}

Wang, Weipeng ^{[1
]}

Chen, Baisong ^{[1
]}

Hu, Heming ^{[1
]}

Zhi, Zihao ^{[1
]}

Li, Jie ^{[1
]}

Na, Quanxin ^{[2
]}

Lo, Guoqiang ^{[3
]}

Li, Xueyan ^{[1
]}

Wang, Lei ^{[2
]}

Hu, Xiaolong ^{[1
]}

Song, Junfeng ^{[1
,2
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

[2] Peng Cheng Lab, Shenzhen 518000, Peoples R China

[3] Adv Micro Foundry Pte Ltd AMF, Singapore 117685, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Germanium; Optical waveguides; Phototransistors; Performance evaluation; Dark current; Electric fields; Photoconductivity; Phototransistor; high responsivity; silicon photonic integrated circuit; SILICON; PLATFORM;

D O I：

10.1109/LED.2024.3438192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-bias phototransistors featured with high responsivity have been widely applied in optoelectronic detection and optical communications. However, the conventional phototransistors are typically with large dark current, degrading the performance severely. In this work, we propose a new Ge/Si-based phototransistor formed by a N/P/i-Ge/N structure. Within the structure, an intrinsic Ge serves as the absorption region and the Base region is p-type doped on silicon. Experimentally, we demonstrate up to 102.81 A/W responsivity at the wavelength of 1550 nm and 3.60 mu A dark current, with the applied bias voltage of 1 V. To our knowledge, this is 2x improvement in responsivity compared to the reported phototransistors. Moreover, the excess noise power spectral density is 1.29 x 10(-20) W/Hz. The device has exhibited remarkable improvements in photocurrent and optical response.

引用

页码：1918 / 1921

页数：4

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