Atomic Layer Annealing on Ultrathin SiN x Resistive Switching Layer for Low-Voltage Operation of Resistive Random Access Memory

This study investigates the effect of atomic layer annealing (ALA) on the resistive switching characteristics of SiN x -based resistive random access memory (RRAM) devices. The energy transfer occurs in the ALA process via the in situ plasma treatment introduced in each cycle of atomic layer deposition. The ALA treatment reduces nitrogen vacancies and increases the film density of the SiN x layer with a thickness of only 3.5 nm, as revealed by X-ray reflectivity and X-ray photoelectron spectroscopy analyses. Consequently, the SiN x RRAM devices subjected to ALA demonstrate lower operating voltages and improved uniformity in their resistive switching properties. Furthermore, the ALA treatment contributes to a significant enhancement in pulse endurance of over 104 cycles and an exceptional retention time exceeding 106 seconds at 125 degrees C. This research provides a promising approach to improving the performance of SiN x RRAM devices characterized by low-voltage operation along with high uniformity and reliability.