Pressure-induced structural transitions and metallization in ZrSe2

被引:0
|
作者
Gao, Yiping [1 ]
Liu, Chenchen [1 ]
Tian, Can [1 ]
Zhu, Chengcheng [1 ]
Huang, Xiaoli [1 ]
Cui, Tian [2 ]
机构
[1] Jilin Univ, Coll Phys, State Key Lab Superhard Mat, Changchun 130012, Peoples R China
[2] Ningbo Univ, Sch Phys Sci & Technol, Ningbo 315211, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
high pressure; transition metal dichalcogenides; structure phase transition; electrical transport properties; 61.05.cp; 61.50.Ks; 64.30.-t; 78.30.-j;
D O I
10.1088/1674-1056/ad8ec9
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
High-pressure studies of two-dimensional materials have revealed numerous novel properties and physical mechanisms behind them. As a typical material of transition metal dichalcogenides (TMDs), ZrSe2 exhibits high carrier mobility, rich electronic states regulated by doping, and high potential in applications at ambient pressure. However, the properties of ZrSe2 under pressure are still not clear, especially for the structural and electrical properties. Here, we report the investigation of ZrSe2 under pressure up to 66.5 GPa by in-situ x-ray diffraction, Raman, electrical transport measurements, and first-principles calculations. Two structural phase transitions occur in ZrSe2 at 8.3 GPa and 31.5 GPa, from P-3m1 symmetry to P21/m symmetry, and finally transformed into a non-layer I4/mmm symmetry structure. Pressure-induced metallic transition is observed at around 19.4 GPa in phase II which aligns well with the results of the calculation. Our work will help to improve the understanding of the evolution of the structure and electrical transport properties of two-dimensional materials.
引用
收藏
页数:5
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