Inkjet-printed graphene oxide memory cells on paper for flexible electronics

被引:1
作者
Salaoru, Iulia [1 ]
Worsley, Myles [2 ]
Fern, George [2 ,3 ]
Paul, Shashi [1 ,2 ]
机构
[1] De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, England
[2] Brunel Univ London, Expt Tech Ctr, Uxbridge UB8 3PH, England
[3] Brunel Univ London, Dept Chem Engn, Uxbridge UB8 3PH, England
关键词
Inkjet printing; Silver ink; Reduced graphene oxide ink; Memory cells; Bi-stability; Retention time;
D O I
10.1007/s42452-025-06555-8
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A number of two-dimensional (2D) materials have been explored for various applications, from electronic transistors to energy generation and storage. In this work, we explored the possibility of using reduced graphene oxide (rGO) in emerging two terminal memory devices using a printing technique. The fabricated memory devices were analysed using scanning electron microscopy, Raman spectroscopy, optical microscopy, and in-depth electrical measurements. We experimentally demonstrated that rGO memory devices fabricated via inkjet printing exhibit bipolar switching without the required electroforming step, with an on/off ratio of 3 orders of magnitude. The inkjet-printed approach allows for the layering of memory devices on each other, leading to an increase in information storage density.
引用
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页数:9
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