Thermal properties of SnSe nanoflakes by AFM-based scanning thermal microscopy measurements

被引：2

作者：

Ozdogan, M. ^{[1
]}

Iken, T. ^{[1
]}

Cakir, D. ^{[1
]}

Oncel, N. ^{[1
]}

机构：

[1] Univ North Dakota, Dept Phys & Astrophys, Grand Forks, ND 58202 USA

来源：

APPLIED PHYSICS LETTERS | 2024年 / 125卷 / 24期

基金：

美国国家科学基金会;

关键词：

THERMOELECTRIC PERFORMANCE; PHONON TRANSPORT; CONDUCTIVITY;

D O I：

10.1063/5.0242987

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the thermal resistance of SnSe nanoflakes using scanning thermal microscopy (SThM), an extension of atomic force microscopy that allows for nanoscale thermal mapping. The nanoflakes studied ranged in thickness from 5 to 40 nm, enabling us to observe the thermal properties across a wide range of dimensions. Our findings reveal a clear trend of increasing thermal resistance with SnSe nanoflake thickness, suggesting that heat transport in SnSe is governed by diffusive mechanisms that limit the effectiveness of nanostructuring in further reducing thermal conductivity. This investigation showcases the capabilities of SThM for nanoscale thermal analysis, providing critical insights into the intrinsic thermal transport properties of SnSe.

引用

页数：5

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