Design and experimental verification of an ultrafast medium-voltage DC solid-state circuit breaker using cascaded normally-on SiC JFETs

被引：0
作者：
He D. [1 ]
Xu X. [1 ]
Lan Z. [1 ]
Wang W. [2 ]
机构：
[1] College of Electrical and Information Engineering, Hunan University of Technology, Zhuzhou
[2] College of Electrical and Information Engineering, Hunan University, Changsha
来源：
Dianli Xitong Baohu yu Kongzhi/Power System Protection and Control | 2024年 / 52卷 / 05期
关键词：
DC distribution network; MOV; short-circuit fault; SiC JFET; solid-state circuit breaker;
D O I：
10.19783/j.cnki.pspc.231277
中图分类号：
学科分类号：
摘要：
The solid-state circuit breaker (SSCB) is a crucial component in the protection of DC distribution networks in that they facilitate reliable, arc-free, and fast isolation of DC faults. First, a novel medium-voltage DC SSCB topology based on cascaded silicon carbide (SiC) junction field effect transistors (JFETs) is proposed. When a DC fault occurs, metal oxide varistors (MOVs) are used to provide driving voltage to the gate-source terminals of cascaded normally-on SiC JFETs of the SSCB main switch. These can achieve fast DC fault protection. Additionally, the operational characteristics of the SSCB turn-off and turn-on processes are analyzed in detail, and the design method of key parameters of the SSCB drive circuit is proposed. Finally, a 1.5 kV/63 A medium-voltage SSCB prototype based on three cascaded normally-on SiC JFETs is developed, and the effectiveness of the design scheme is verified through short-circuit fault and fault recovery experiments. The results indicate that the response time for the SSCB to turn off the 250A short-circuit current is about 20 μs. Fault recovery conduction response time is about 12 μs. This provides a foundation for the topology optimization design of medium-voltage DC SSCB and the improvement of dynamic and static voltage balance performance of cascaded normally-on SiC JFETs. © 2024 Power System Protection and Control Press. All rights reserved.
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页码：158 / 167
页数：9
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