Evaluation of electron-phonon coupling strength and average phonon energy in MoS2 thin film

The advancement of nanodevice technology necessitates a shift from conventional 3D semiconductors to more efficient materials, especially as device sizes shrink and short channel effects become increasingly significant. Transition metal dichalcogenides (TMDCs), a class of 2D materials, have emerged as a promising alternative due to their atomically thin layers, excellent electrical conductivity, and tunable bandgaps. These properties make TMDCs particularly attractive for applications in electronics and photonics. In this study, we present a comparative analysis of molybdenum disulfide (MoS2) samples fabricated via two different methods: chemical vapor deposition and mechanical exfoliation. Our goal is to understand how the growth technique influenced the material's optical properties and band transitions. Using optical spectroscopy techniques, including photoluminescence and Raman spectroscopy, we observed distinct variations in electron-phonon coupling strength and average phonon energies between the two sample types. These findings highlight the impact of fabrication methods on the optical behavior of MoS2, offering critical insights for optimizing the material for future nanodevice applications.