Epitaxial growth of Ge1-xSnx thin film with Sn composition of 50% and possibility of Ge-Sn ordered bonding structure formation

被引：0

作者：

Shibayama, Shigehisa ^{[1
]}

Shibata, Kaito ^{[1
]}

Sakashita, Mitsuo ^{[1
]}

Kurosawa, Masashi ^{[1
]}

Nakatsuka, Osamu ^{[1
,2
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya 4648603, Japan

[2] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya 4648601, Japan

来源：

APPLIED PHYSICS EXPRESS | 2024年 / 17卷 / 11期

基金：

日本学术振兴会;

关键词：

germanium; tin; Ge1-xSnx; order bonding; zincblend; epitaxial growth; group-IV semiconductor;

D O I：

10.35848/1882-0786/ad9190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examined the epitaxial growth of Ge1-xSnx thin film with x similar to 0.50 on GaSb(111) substrate using a low-temperature MBE. X-ray diffraction and Raman scattering spectroscopy analyses revealed that the Ge1-xSnx thin film with x similar to 0.50 with no strain was successfully grown on GaSb(111). Furthermore, in the Raman analysis, a sharper Ge-Sn peak compared to Ge-Ge and Sn-Sn peaks was clearly observed and showed an improved thermal stability than Ge1-xSnx with a smaller Sn composition. This suggests that the Ge1-xSnx with x similar to 0.50 would have an ordered Ge-Sn bonding like a zinc blend system, that is significantly different from Si1-xGex case.

引用

页数：4

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