Improved energy-storage and charge-discharge properties achieved in NaNbO3-Bi(Mg0.5Zr0.5)O3 ceramics

被引:0
|
作者
Hao, Hongjuan [1 ,2 ,3 ]
Pu, Hongbin [1 ,3 ]
Lu, Dingze [2 ]
Zhou, Min [2 ]
Zhang, Xin [2 ]
Cheng, Pengfei [2 ]
机构
[1] Xian Univ Technol, Sch Automat & Informat Engn, Xian 710048, Shaanxi, Peoples R China
[2] Xian Polytech Univ, Sch Sci, Xian 710048, Peoples R China
[3] Xian Key Lab Power Elect Devices & High Efficiency, Xian 710048, Peoples R China
关键词
LEAD-FREE CERAMICS; FREE DIELECTRIC CERAMICS; HIGH-POWER DENSITY; EFFICIENCY;
D O I
10.1007/s10854-024-13580-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Herein, the energy-storage performance of NaNbO3-based lead-free ceramics has been successfully reinforced by introducing Bi(Mg0.5Zr0.5)O-3 to improve the breakdown strength (BDS) and suppress the remnant polarization (P-r). A superior discharge energy density (W-d) of 3.01 J cm(-3) and an outstanding energy efficiency (eta) of 90.2%, accompanied with high thermal stability of energy-storage performance ranging from 30 degrees C to 150 degrees C, have been concurrently recorded in 0.88NaNbO(3)-0.12Bi(Mg0.5Zr0.5)O-3 ceramic at 320 kV cm(-1). The results show that the introduction of Bi(Mg0.5Zr0.5)O-3 can enhance BDS due to its considerable insulation, which is confirmed by the calculation of the band structure and the projected density of states. In addition, the remarkable current density (C-D) of 644.51 A cm(-2), preeminent power density (P-D) of 38.68 MW<middle dot>cm(-3) and transient energy release times (t(0.9)) of 41.2 ns were also obtained in 0.88NaNbO(3)-0.12Bi(Mg0.5Zr0.5)O-3 ceramic. Therefore, this study can significantly contribute to the application of NaNbO3-based ferroelectrics in advanced pulsed power systems.
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页数:11
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