LiNbO3-based ferroelectric tunnel junctions with changeable electroresistance for data storage

Ferroelectric tunnel junctions (FTJs) have attracted considerable attention for potential applications in the next- generation data storage technologies. In this work, we have grown high-quality LiNbO3 3 single crystal films on STO (111) substrates by rotational epitaxy. The certain ferroelectricity was achieved in nanoscale epitaxial LiNbO3 3 films. Then, the Au/LiNbO3/Nb: 3 /Nb: SrTiO3 3 FTJ was fabricated, and the nonvolatile resistive switching controlled by the nonvolatile polarization switching was observed. The Au/LiNbO3/Nb: 3 /Nb: SrTiO3 3 FTJs regulate the quantum tunneling effect through ferroelectric polarization reversal to obtain multi-level resistive states, thereby achieving data storage functionality. At room temperature, the ON/OFF current ratio can exceed 103. 3 . Furthermore, the FTJs also exhibit excellent retention for more than 103 3 s and good switching endurance for 2000 cycles. The results suggest the application potential of this LiNbO3-based 3-based FTJ for next generation nonvolatile ferroelectric memories.