Editorial for the Special Issue on the Latest Advancements in Semiconductor Materials, Devices and Systems

[1] Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) : 1344 - 1355

[2] The future transistors [J]. NATURE, 2023, 620 (7974) : 501 - 515

[3] Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1366 - 1369

[4] GaN-on-Si Power Technology: Devices and Applications [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 779 - 795

[5] A Study on the Frequency-Domain Black-Box Modeling Method for the Nonlinear Behavioral Level Conduction Immunity of Integrated Circuits Based on X-Parameter Theory [J]. MICROMACHINES, 2024, 15 (05)

[6] Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation [J]. APPLIED PHYSICS LETTERS, 2024, 124 (17)

[7] Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel [J]. MICROMACHINES, 2023, 14 (11)

[8] Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications [J]. MICROMACHINES, 2023, 14 (11)

[9] Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/nnano.2014.207, 10.1038/NNANO.2014.207]

[10] High-κ perovskite membranes as insulators for two-dimensional transistors [J]. NATURE, 2022, 605 (7909) : 262 - +

[1] Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) : 1344 - 1355

[2] The future transistors [J]. NATURE, 2023, 620 (7974) : 501 - 515

[3] Machine Learning Approach for Predicting the Effect of Statistical Variability in Si Junctionless Nanowire Transistors [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1366 - 1369

[4] GaN-on-Si Power Technology: Devices and Applications [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 779 - 795

[5] A Study on the Frequency-Domain Black-Box Modeling Method for the Nonlinear Behavioral Level Conduction Immunity of Integrated Circuits Based on X-Parameter Theory [J]. MICROMACHINES, 2024, 15 (05)

[6] Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation [J]. APPLIED PHYSICS LETTERS, 2024, 124 (17)

[7] Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel [J]. MICROMACHINES, 2023, 14 (11)

[8] Comprehensive Comparison of MOCVD- and LPCVD-SiNx Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications [J]. MICROMACHINES, 2023, 14 (11)

[9] Fiori G, 2014, NAT NANOTECHNOL, V9, P768, DOI [10.1038/nnano.2014.207, 10.1038/NNANO.2014.207]

[10] High-κ perovskite membranes as insulators for two-dimensional transistors [J]. NATURE, 2022, 605 (7909) : 262 - +