Low-noise integrated balanced-mixer for 300-GHz band based on Fermi-level managed barrier diode on Si platform

被引：0

作者：

Ito, Hiroshi ^{[1
]}

Kawamoto, Yuma ^{[2
]}

Nagatsuma, Tadao ^{[2
]}

Ishibashi, Tadao ^{[3
]}

机构：

[1] Univ Tokyo, Inst Photon Sci & Technol, Grad Sch Sci, Bunkyo Ku, Tokyo 1130033, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[3] Wavepackets LLC, Ninomiya, Kanagawa 2590133, Japan

来源：

IEICE ELECTRONICS EXPRESS | 2024年 / 21卷 / 24期

关键词：

THz wave; balanced mixer; Si platform; FMB diode; BRANCH-LINE COUPLER; MILLIMETER-WAVE; PERFORMANCE; GENERATION; SILICON; GAAS;

D O I：

10.1587/elex.21.20240595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A balanced mixer module for operation in the J-band was developed based on Fermi-level managed barrier (FMB) diodes using epi-layer-transfer technique on a Si substrate. Deep dry etching of the Si substrate enabled an arbitrary chip shape to monolithically integrate FMB diodes, waveguide couplers, a 90-degree hybrid circuit, and low-pass filters with better design flexibility. The fabricated module integrated with a transimpedance amplifier, exhibited a double-side intermediate frequency bandwidth of about 43 GHz. The lowest noise-equivalent-power obtained was as low as 5 x 10(-20) W/Hz for a local oscillator power of 400 mu W at a signal frequency of 300 GHz.

引用

页数：5

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