Novel Wafer-Level Ta-Ta Direct Thermocompression Bonding for 3D Integration of Superconducting Interconnects for Scalable Quantum Computing System

被引:0
作者
Mishra, Harsh [1 ]
Bonam, Satish [1 ]
Kumar, Vinit [1 ]
Singh, Shiv Govind [1 ]
机构
[1] Indian Inst Technol Hyderabad, Dept Elect Engn, Sangareddy 502284, India
关键词
Bonding; Tantalum; Qubit; Quantum computing; Superconducting materials; Superconducting epitaxial layers; Three-dimensional displays; Wafer bonding; thermo-compression bonding; tantalum (Ta); superconductivity; quantum computing; LOW-TEMPERATURE; TANTALUM;
D O I
10.1109/LED.2024.3453174
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As quantum computing evolves from small-scale qubit systems to more complex large-scale processors, the demand for individual qubit control and scalability will lead to the use of 3D integration and packaging technologies. Although advances in 3D integration in traditional CMOS technology are notable at room temperature, its potential in cryogenic environments, especially in quantum computing, remains largely unexplored. Superconducting qubit technology demands improvements in qubit relaxation and coherence time. Tantalum (Ta), renowned for its minimal loss, remarkable coherence time and superior stability, emerges as a promising candidate for superconducting materials. This study presents a novel approach by utilizing Ta-Ta thermo-compression bonding to create superconducting joints between wafers for vertical integration for the first time. A successful bonding temperature (500 degrees C) and pressure (0.3 MPa) results in the emergence of $\alpha $ -tantalum, which improves the coherence time significantly as reported earlier. The shear strength test shows a bond strength of 200 MPa which is a clear indication of a good bond between the two layers. Hence, we demonstrate the feasibility of achieving 3D integration of superconducting chips using this approach, thus opening doors for inventive quantum computing architectures.
引用
收藏
页码:2221 / 2224
页数:4
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