Long room-temperature valley lifetimes of localized excitons in MoS2 quantum dots

被引:0
|
作者
Wang, Hong-jyun [1 ,2 ,3 ]
Chen, Yu-ting [1 ,2 ]
Pan, Ting-yu [1 ,2 ]
Yuan, Chi-tsu [1 ,2 ]
Chou, Wu-ching [3 ]
Chang, Sheng hsiung [4 ]
Lee, Yueh-chien [5 ]
Shen, Ji-lin [1 ,2 ]
机构
[1] Chung Yuan Christian Univ, Ctr Nanotechnol, Dept Phys, Chungli 320314, Taiwan
[2] Chung Yuan Christian Univ, Res Ctr Crystalline Mat & Optoelect Characterizat, Chungli 320314, Taiwan
[3] Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
[4] Natl Taiwan Ocean Univ, Dept Optoelect & Mat Technol, Keelung 202301, Taiwan
[5] Lunghwa Univ Sci & Technol, Dept Elect Engn, Taoyuan 333326, Taiwan
来源
OPTICS EXPRESS | 2024年 / 32卷 / 26期
关键词
SEMICONDUCTOR; POLARIZATION;
D O I
10.1364/OE.540784
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Transition metal dichalcogenides (TMDs), which exhibit valley polarization characteristics, are very promising materials for the realization of valleytronic devices. To implement practical applications, a long valley lifetime at room temperature is necessary. Here, we demonstrate that diethylenetriamine (DETA)-functionalized MoS2 quantum dots (QDs) exhibit long valley lifetimes for localized excitons at room temperature. Based on polarization-resolved photoluminescence (PL) dynamics, the degree of circular polarization of defect-bound localized excitons in MoS2 QDs are found to be between 21% and-22%. The observed room-temperature valley lifetimes for excitons in MoS2 QDs are more than 58 ns, much larger than those in MoS2 monolayers (<= 4 ps). The decay of polarization-resolved PL and the dynamical degree of circular polarization can be modeled by using a rate equation approach. This model is based on intervalley scattering in dark exciton states and relaxation from dark exciton states to localized exciton states. Such a long-lived valley lifetime at room temperature could be significant for future valleytronics applications.<br /> (c) 2024 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
引用
收藏
页码:47375 / 47384
页数:10
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