Mixed-Field Radiation of 3-D MLC Flash Memories for Space Applications

被引：1
作者：
Gonzales, Lorenzo [1 ]
Danzeca, Salvatore [2 ]
Fiore, Salvatore [2 ]
Kramberger, Iztok [1 ]
机构：
[1] Univ Maribor, Fac Elect Engn & Comp Sci, Maribor 2000, Slovenia
[2] European Org Nucl Res CERN, CH-1211 Geneva 23, Switzerland
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2024年 / 71卷 / 11期
关键词：
Radiation effects; Protons; Flash memories; Three-dimensional displays; Silicon; Space vehicles; Nonvolatile memory; Life estimation; Aerospace electronics; Prevention and mitigation; Bit error rate; flash memories; memory controller; mixed field facility; multilevel cell (MLC); radiation hardness; single-event upsets (SEUs); space applications; total ionizing dose; PROTON-INDUCED UPSETS; NAND FLASH; FACILITY;
D O I：
10.1109/TNS.2024.3474746
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article presents the results of dynamic measurements of 3-D multilevel cell (MLC)NAND flash memories in a mixed-field radiation facility CERN High-energy AcceleRator Mixed field/facility (CHARM), CERN. The results show that the behavior of devices is comparable to tests with specific high energy particles, such as high energy protons, heavy ions, and to TID tests. The observed TID and single-event effects (SEEs) in flash memories from the existing relevant work are also observed in mixed field, making the environment suitable for an accelerated system level test. As the CHARM hadron energy spectrum is comparable to the low Earth orbit (LEO) environment, the facility is appropriate as an accelerated test for space applications. Furthermore, the volumetric characteristics of the devices can be observed in this 3-D radiation facility. Additionally, bad bit (BB) spread was observed, and the necessary radiation induced errors inNAND devices are discussed.
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收藏
页码：2400 / 2408
页数：9
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