Femtosecond laser annealing of 4H-SiC interfaces and optimization of their electrical performance

被引：1

作者：

Ren, Yuqi ^{[1
,3
]}

Yue, Yunfan ^{[1
,3
]}

Li, Sheng ^{[1
,4
]}

Chai, Nianyao ^{[1
,4
]}

Chen, Xiangyu ^{[1
,3
]}

Zeng, Zhongle ^{[1
,4
]}

Zhao, Fengyi ^{[2
]}

Wang, Huan ^{[1
,3
]}

Wang, Xuewen ^{[1
,2
,4
]}

机构：

[1] Center of Femtosecond Laser Manufacturing for Advanced Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan

[2] Foshan Xianhu Laboratory, Foshan

[3] School of Materials Science and Engineering, Wuhan University of Technology, Wuhan

[4] International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan

来源：

Guangxue Jingmi Gongcheng/Optics and Precision Engineering | 2024年 / 32卷 / 19期

关键词：

contact interface; femtosecond laser; Schottky barrier; silicon carbide;

D O I：

10.37188/OPE.20243219.2889

中图分类号：

学科分类号：

摘要：

Enhancing the electrical contact properties between SiC and metal interfaces is crucial for advancing SiC materials in high-frequency and high-power devices. This study utilized a 1030 nm near-infrared femtosecond laser to anneal the 4H-SiC surface，analyzing the effects of various laser annealing parameters. We examined changes in surface morphology，element distribution，and bonding structure of the laser-annealed samples using scanning electron microscopy，X-ray photoelectron spectroscopy，confocal Raman spectroscopy，and other methods. The study revealed that improvements in electrical properties at the contact interface result from a disordered graphite structure and SiOx/Si structure with oxygen vacancies created by laser annealing. This structure reduces the interface Schottky barrier height，enhances conductivity，and shifts the Fermi level of the 4H-SiC surface，significantly boosting interface electrical properties. Femtosecond laser annealing reduced the SiC interface Schottky barrier from 1. 43 eV to 0. 69 eV and increased the carrier concentration from 5. 40×1013 cm-3 to 1. 77×1018 cm-3，presenting a novel method for optimizing SiC interface electrical properties with ultrafast laser annealing. © 2024 Chinese Academy of Sciences. All rights reserved.

引用

页码：2889 / 2898

页数：9

共 27 条

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