Ultralong near-infrared persistent luminescence in a Cr3+-doped gallogermanate for multifunctional applications

被引:1
作者
Zhao, Fangyi [1 ]
Shao, Yuhe [2 ]
Mao, Qinan [1 ]
Zhu, Yiwen [1 ]
Yang, Heyi [1 ]
Ding, Yang [1 ]
Liu, Quanlin [2 ]
Zhong, Jiasong [1 ]
机构
[1] Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Ctr Adv Optoelect Mat, Hangzhou 310018, Peoples R China
[2] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Technol, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
LONG PERSISTENT; PHOSPHOR; RED;
D O I
10.1039/d4tc04187a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Near-infrared (NIR) persistent luminescence (PersL) materials show promising prospects in achieving multifunctional applications. However, the lack of excellent NIR PersL materials with high PersL brightness and ultralong PersL duration hinders their practical applications. Herein, we report a Cr3+-doped broadband NIR phosphor Mg8.9Ga14.2Ge4.9O40:Cr3+ (MGGO:Cr3+) with tunable photoluminescence and excellent PersL performance. The NIR emission wavelength of MGGO:Cr3+ can be tuned from 692 to 865 nm due to the multi-site occupation of Cr3+ ion. The designed MGGO:0.05Cr3+ phosphor exhibits intense NIR PersL in the wavelength range of 600-1100 nm with a PersL duration longer than 55 h. The ultralong PersL characteristic mainly originates from the slow release of electrons from deep traps. Through detailed analysis of trap energy levels and electron charging/de-trapping process, a possible PersL mechanism of MGGO:Cr3+ is proposed. Finally, we demonstrate the potential applications of MGGO:Cr3+ in broadband NIR phosphor-converted light-emitting diode devices, tissue penetration, labelling and tracing, multi-level anti-counterfeiting and encryption fields.
引用
收藏
页码:2895 / 2904
页数:10
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