Large piezoelectric responses and ultra-high carrier mobility in Janus HfGeZ3H (Z = N, P, As) monolayers: a first-principles study

被引：0

作者：

Vu, Tuan V. ^{[1
,2
]}

Phuc, Huynh V. ^{[3
]}

Phuong, Le T. T. ^{[4
]}

Vi, Vo T. T. ^{[5
]}

Kartamyshev, A.I. ^{[1
,2
]}

Hieu, Nguyen N. ^{[6
,7
]}

机构：

[1] Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Viet Nam

[2] Faculty of Mechanical - Electrical and Computer Engineering, School of Technology, Van Lang University, Ho Chi Minh City, Viet Nam

[3] Division of Physics, School of Education, Dong Thap University, Cao Lanh,870000, Viet Nam

[4] Department of Physics, University of Education, Hue Unversity, Hue, Viet Nam

[5] Faculty of Basic Sciences, University of Medicine and Pharmacy, Hue University, Hue, Viet Nam

[6] Institute of Research and Development, Duy Tan University, Da Nang,550000, Viet Nam

[7] Faculty of Natural Sciences, Duy Tan University, Da Nang,550000, Viet Nam

来源：

Nanoscale Advances | / 6卷 / 16期

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摘要：

Energy gap - Hafnium compounds - Mechanical stability - Monolayers - Piezoelectricity

引用

页码：4128 / 4136