Carrier Relaxation Times in InAs/AlAs Superlattices: Modulating by Layers, Temperature, and Carrier Concentrations

被引：0

作者：

Enrui Zhang ^{[1
,2
]}

Jinshan Yao ^{[3
,4
]}

Zhiming Geng ^{[3
,4
]}

Yueying Hou ^{[3
,4
]}

Jiayu Dai ^{[1
,2
]}

Hong Lu ^{[3
,4
]}

机构：

[1] College of Science,National University of Defense Technology

[2] Hunan Key Laboratory of Extreme Matter and Applications,National University of Defense Technology

[3] National Laboratory of Solid State Microstructures,Nanjing University

[4] Department of Materials Science and Engineering,College of Engineering and Applied Sciences,Nanjing

来源：

Chinese Physics Letters | 2025年 / 42卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

<正>InAs/AlAs superlattice structures have significant potential for application in low-noise avalanche photodetectors. With their performance in practical applications linked to the fundamental physical properties of carrier relaxation time, this study investigated the carrier relaxation times of InAs/AlAs superlattices across various monolayers, temperatures, and carrier concentrations.

引用

页码：188 / 192

页数：5

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