Carrier Relaxation Times in InAs/AlAs Superlattices: Modulating by Layers, Temperature, and Carrier Concentrations

被引：0
作者：
Enrui Zhang [1 ,2 ]
Jinshan Yao [3 ,4 ]
Zhiming Geng [3 ,4 ]
Yueying Hou [3 ,4 ]
Jiayu Dai [1 ,2 ]
Hong Lu [3 ,4 ]
机构：
[1] College of Science,National University of Defense Technology
[2] Hunan Key Laboratory of Extreme Matter and Applications,National University of Defense Technology
[3] National Laboratory of Solid State Microstructures,Nanjing University
[4] Department of Materials Science and Engineering,College of Engineering and Applied Sciences,Nanjing
来源：
Chinese Physics Letters | 2025年 / 42卷 / 02期
关键词：
D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
<正>InAs/AlAs superlattice structures have significant potential for application in low-noise avalanche photodetectors. With their performance in practical applications linked to the fundamental physical properties of carrier relaxation time, this study investigated the carrier relaxation times of InAs/AlAs superlattices across various monolayers, temperatures, and carrier concentrations.
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页码：188 / 192
页数：5
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