A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Transistor with T-Dual Dielectric Buried Layers

A novel silicon-on-insulator（SOI）high-voltage device of super-junction（SJ）lateral-double-diffused metal-oxidesemiconductor transistors（LDMOSTs）with T-dual dielectric buried layers（T-DBLs）is presented.The T-DBLs are formed by the first T-shaped dielectric layer and the second dielectric layer.A lot of holes are accumulated on the top interface of the second dielectric layer,which compensates for the charge imbalance of the surface N and P pillars,thus the substrate-assisted depletion（SAD）effect is eliminated in the new device.The electric field of the second dielectric buried layer,E12,is enhanced by the interface charges,and the breakdown voltage Vbreakdownis increased.E12=515 V/μm is obtained in the T-DBL SOI SJ.The Vbreakdownof the new device is increased from124 V of the conventional SOI SJ to 302 V with a 15μm length drift region.The specific on-resistance(Ron,sp)of the T-DBL SOI SJ is only 0.00865Ω·cm2 and the FOM(FOM=Vbreakdown2/Ron,sp)is 10.54 MW/cm2.