A Novel Silicon-on-Insulator Super-Junction Lateral-Double-Diffused Metal-Oxide-Semiconductor Transistor with T-Dual Dielectric Buried Layers

被引：0

作者：

吴丽娟 ^{[1
,2
]}

章文通 ^{[2
]}

张波 ^{[2
]}

李肇基 ^{[2
]}

机构：

[1] College of Communication Engineering,Chengdu University of Information Technology

[2] State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

来源：

Chinese Physics Letters | 2013年 / 30卷 / 12期

关键词：

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A novel silicon-on-insulator（SOI）high-voltage device of super-junction（SJ）lateral-double-diffused metal-oxidesemiconductor transistors（LDMOSTs）with T-dual dielectric buried layers（T-DBLs）is presented.The T-DBLs are formed by the first T-shaped dielectric layer and the second dielectric layer.A lot of holes are accumulated on the top interface of the second dielectric layer,which compensates for the charge imbalance of the surface N and P pillars,thus the substrate-assisted depletion（SAD）effect is eliminated in the new device.The electric field of the second dielectric buried layer,E12,is enhanced by the interface charges,and the breakdown voltage Vbreakdownis increased.E12=515 V/μm is obtained in the T-DBL SOI SJ.The Vbreakdownof the new device is increased from124 V of the conventional SOI SJ to 302 V with a 15μm length drift region.The specific on-resistance(Ron,sp)of the T-DBL SOI SJ is only 0.00865Ω·cm2 and the FOM(FOM=Vbreakdown2/Ron,sp)is 10.54 MW/cm2.

引用

页码：116 / 119

页数：4