Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

被引：0

作者：

苏少坚 ^{[1
]}

韩根全 ^{[2
]}

张东亮 ^{[3
]}

张广泽 ^{[3
]}

薛春来 ^{[3
]}

王启明 ^{[3
]}

成步文 ^{[3
]}

机构：

[1] College of Information Science and Engineering,Huaqiao University

[2] Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China,College of Optoelectronic Engineering,Chongqing University

[3] State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences

来源：

Chinese Physics Letters | 2013年 / 30卷 / 11期

关键词：

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Germanium-tin(Ge1-xSnx) p-type metal-oxide-semiconductor field effect transistors（pMOSFETs） were fabricated using a strained Ge0.985Sn0.015 thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer.The Ge buffer was deposited using a two-step chemical vapor deposition growth technique.The high quality Ge0.985 Sn0.015 layer was grown by solid source molecular beam epitaxy.Ge0.985Sn0.015 pMOSFETs with Si surface passivation,TaN/HfO2 gate stack,and nickel stanogermanide[Ni(Ge1-xSnx)]source/drain were fabricated on the grown substrate.The device achieves an effective hole mobility of 182 cm2/V·s at an inversion carrier density of 1×1013 cm-2.

引用

页码：202 / 205

页数：4