A model for defect formation in materials exposed to radiation

被引:0
|
作者
Sergio Davis [1 ,2 ]
Felipe GonzlezCataldo [3 ,4 ]
Gonzalo Gutirrez [4 ]
Gonzalo Avaria [1 ,2 ]
Biswajit Bora [1 ,2 ]
Jalaj Jain [1 ]
JosMoreno [1 ,2 ]
Cristian Pavez [1 ,2 ]
Leopoldo Soto [1 ,2 ]
机构
[1] Comisión Chilena de Energía Nuclear
[2] Departamento de Física,Facultad de Ciencias Exactas, Universidad Andres Bello
[3] Department of Earth and Planetary Science, University of California
[4] Grupo de Nanomateriales, Departamento de Física, Facultad de Ciencias, Universidad de
关键词
D O I
暂无
中图分类号
TL632 [惯性约束装置];
学科分类号
摘要
A simple model for the stochastic evolution of defects in a material under irradiation is presented.Using the master-equation formalism,we derive an expression for the average number of defects in terms of the power flux and the exposure time.The model reproduces the qualitative behavior of self-healing due to defect recombination,reaching a steady-state concentration of defects that depends on the power flux of the incident radiation and the material temperature,while also suggesting a particular time scale on which the incide nt energy is most efficient for producing defects,in good agreement with experimental results.Given this model,we discuss the integral damage factor,a descriptor that combines the power flux and the square of the irradiation time.In recent years,the scientific community involved in plasma-facing materials for nuclear fusion reactors has used this parameter to measure the equivalent material damage produced in experiments of various types with different types of radiation and wide ranges of power flux and irradiation time.The integral damage factor is useful in practice but lacks formal theoretical justification.In this simple model,we find that it is directly proportional to the maximum concentration of defects.
引用
收藏
页码:69 / 77
页数:9
相关论文
共 50 条
  • [31] Role of sodium in radiation defect formation in CsI crystals
    Trefilova, LN
    Kudin, AM
    Kovaleva, LV
    Charkina, TA
    Mitichkin, AI
    Belenko, LE
    RADIATION MEASUREMENTS, 2001, 33 (05) : 687 - 692
  • [32] Radiation-induced defect formation in chalcogenide glasses
    Shpotyuk, OI
    Filipecki, J
    Kozdras, A
    Kavetskyy, TS
    XIIITH INTERNATIONAL SYMPOSIUM ON NON-OXIDE GLASSES AND NEW OPTICAL GLASSES PTS 1 AND 2, 2002, : 212 - 215
  • [33] INFLUENCE OF THERMAL DONORS ON RADIATION DEFECT FORMATION IN SILICON
    NEIMASH, VB
    SIRATSKII, VM
    SOSNIN, MG
    SHAKHOVTSOV, VI
    SHINDICH, VL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (02): : 155 - 156
  • [34] THRESHOLD OF FORMATION OF RADIATION-DEFECT CLUSTERS IN A SEMICONDUCTOR
    VINETSKII, VL
    KONDRACHUK, AV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 218 - 219
  • [35] THEORY OF DEFECT FORMATION IN ALKALI HALIDES BY IONIZING RADIATION
    WILLIAMS, FE
    PHYSICAL REVIEW, 1962, 126 (01): : 70 - &
  • [36] KINETICS OF FORMATION AND PARAMETERS OF RADIATION DEFECT CLUSTERS IN SILICON
    VINETSKII, VL
    KONDRACHUK, AV
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (04): : 227 - 232
  • [37] AEROCOLLOID FORMATION FROM SEMISOLID MATERIALS EXPOSED TO SUNLIGHT
    ORR, C
    KENG, EYH
    BULLETIN OF ENVIRONMENTAL CONTAMINATION AND TOXICOLOGY, 1973, 9 (06) : 356 - 360
  • [38] Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles
    V. V. Kozlovski
    A. E. Vasil’ev
    V. V. Emtsev
    G. A. Oganesyan
    A. A. Lebedev
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2019, 13 : 1155 - 1159
  • [39] RADIATION-INDUCED DEFECT FORMATION IN SILICA GLASSES
    GULAMOVA, RR
    GASANOV, EM
    SAZONOVA, EV
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 135 (01): : 109 - 117
  • [40] RADIATION DEFECT FORMATION IN PALLADIUM-DOPED SILICON
    MIRZAEV, A
    MAKHKAMOV, S
    TURSUNOV, NA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (07): : 746 - 748