Properties of titanium nitride films for barrier metal in aluminum ohmic contact systems

被引：0
|
作者：
Hara, Tohru [1 ]
Yamanoue, Akira [1 ]
Iio, Hiroki [1 ]
Inoue, Ken [1 ]
Washidzu, Gen [1 ]
Nakamura, Shigeaki [1 ]
机构：
[1] Hosei Univ, Koganei, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1991年 / 30卷 / 07期
关键词：
Aluminum And Alloys--Contacts - Sputtering;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Properties of titanium nitride (TiN) films deposited by reactive sputtering and dc magnetron sputtering from composite target are studied. In the as-deposited films, a TiN (200) grain, which is the lowest energy grain and is dominant in bulk TiN, is grown in films from composite target. A resistivity of 44 μΩ-cm is attained. These results show that high quality TiN films can be deposited by dc magnetron sputtering employed TiN composite target. However, a TiN (111) grain is grown in TiN films by the nitridation of Ti. Nitridation of a reactively sputtered TiN film in ammonium is also studied. The TiN films deposited from composite target and formed by the nitridation of titanium show good barrier performance in Al-Si/TiN/Si Ohmic contact.
引用
收藏
页码：1447 / 1451
相关论文
共 50 条
  • [1] PROPERTIES OF TITANIUM NITRIDE FILMS FOR BARRIER METAL IN ALUMINUM OHMIC CONTACT SYSTEMS
    HARA, T
    YAMANOUE, A
    IIO, H
    INOUE, K
    WASHIDZU, G
    NAKAMURA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (07): : 1447 - 1451
  • [2] TUNGSTEN SILICIDE BARRIER LAYERS IN ALUMINUM OHMIC CONTACT SYSTEMS
    HARA, T
    HAYASHIDA, H
    TAKAHASHI, S
    YAMANOUE, A
    THIN SOLID FILMS, 1989, 177 : 9 - 16
  • [3] ALUMINUM DIFFUSION IN TITANIUM NITRIDE FILMS - EFFICIENCY OF TIN BARRIER LAYERS
    GRIGOROV, GI
    GRIGOROV, KG
    STOYANOVA, M
    VIGNES, JL
    LANGERON, JP
    DENJEAN, P
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 57 (02): : 195 - 197
  • [4] REACTIVELY SPUTTERED TITANIUM NITRIDE FILMS FOR SUBMICRON CONTACT BARRIER METALLIZATION
    DIXIT, GA
    WEI, CC
    LIOU, FT
    ZHANG, H
    APPLIED PHYSICS LETTERS, 1993, 62 (04) : 357 - 359
  • [5] Aluminum nitride thin films on titanium for piezoelectric microelectromechanical systems
    Boeshore, SE
    Parker, ER
    Lughi, V
    MacDonald, NC
    Bingert, M
    2005 IEEE ULTRASONICS SYMPOSIUM, VOLS 1-4, 2005, : 1641 - 1643
  • [6] Effect of aluminum concentration on friction and wear properties of titanium aluminum nitride films
    Ohnuma, H
    Nihira, N
    Mitsuo, A
    Toyoda, K
    Kubota, K
    Aizawa, T
    SURFACE & COATINGS TECHNOLOGY, 2004, 177 : 623 - 626
  • [7] Effect of contact metals on the piezoelectric properties of aluminum nitride thin films
    Harman, J.
    Kabulski, A.
    Pagan, V. R.
    Famouri, P.
    Kasarla, K. R.
    Rodak, L. E.
    Hensel, J. Peter
    Korakakis, D.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (04): : 1417 - 1419
  • [8] Precursors for the chemical vapor deposition of titanium nitride and titanium aluminum nitride films
    Winter, CH
    McKarns, PJ
    Scheper, JT
    CHEMICAL ASPECTS OF ELECTRONIC CERAMICS PROCESSING, 1998, 495 : 95 - 106
  • [9] Study on the Ohmic Contact, Electrical and Optical Properties of Nanostructured Titanium Dioxide Thin Films
    Ahmad, M. K.
    Rusop, M.
    NANOSCIENCE AND NANOTECHNOLOGY, 2009, 1136 : 327 - 332
  • [10] ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE
    BLECH, IA
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1203 - 1208
12345