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- [21] Molecular beam epitaxy grown Ga2O3(Gd2O3) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (03): : 1128 - 1131
- [22] Gd2O3, Ga2O3(Gd2O3), Y2O3 and Ga2O3, as high-k gate dielectrics on SiGe -: a comparative study PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 1174 - 1177
- [25] Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-K gate dielectrics on sige: A comparative study 1600, American Institute of Physics Inc. (90):
- [26] GaAs MOSFET's using Ga2O3(Gd2O3) as gate dielectric (invited) 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 685 - 688
- [27] Advances in GaAs MOSFET's using Ga2O3(Gd2O3) as gate oxide COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 219 - 225
- [30] Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (05): : 1706 - 1710