Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3(Gd2O3)/GaAs

被引:0
|
作者
Department of Physics, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan [1 ]
不详 [2 ]
不详 [3 ]
机构
来源
Appl Phys Lett | / 14卷 / 2038-2040期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Temperature dependence of photoluminescence on molecular-beam-epitaxy grown Ga2O3(Gd2O3)/GaAs
    Tu, LW
    Lee, YC
    Lee, KH
    Lai, CM
    Lo, I
    Hsieh, KY
    Hong, M
    APPLIED PHYSICS LETTERS, 1999, 75 (14) : 2038 - 2040
  • [2] Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique -: Key to first demonstration of GaAs MOSFETs
    Hong, M
    Ren, F
    Hobson, WS
    Kuo, JM
    Kwo, J
    Mannaerts, JP
    Lothian, JR
    Marcus, MA
    Liu, CT
    Sergent, AM
    Lay, TS
    Chen, YK
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 319 - 324
  • [3] Growth of Ga2O3(Gd2O3) using molecular beam epitaxy technique -: key to first demonstration of GaAs MOSFETs
    Hong, M
    Ren, F
    Hobson, WS
    Kuo, JM
    Kwo, J
    Mannaerts, JP
    Lothian, JR
    Marcus, MA
    Liu, CT
    Sergent, AM
    Lay, TS
    Chen, YK
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 319 - 324
  • [4] Ga2O3(Gd2O3)/GaAs power MOSFETs
    Wang, YC
    Hong, M
    Kuo, JM
    Mannaerts, JP
    Tsai, HS
    Kwo, J
    Krajewski, JJ
    Chen, YK
    Cho, AY
    ELECTRONICS LETTERS, 1999, 35 (08) : 667 - 669
  • [5] Ga2O3(Gd2O3)/GaAs power MOSFETs
    Electron. Lett., 8 (667-669):
  • [6] Depletion-mode In0.2Ga0.8As/GaAs MOSFET with molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3) as gate dielectrics
    Lin, C. A.
    Lin, T. D.
    Chiang, T. H.
    Chiu, H. C.
    Chang, P.
    Hong, M.
    Kwo, J.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1954 - 1957
  • [7] Engineering of threshold voltages in molecular beam epitaxy-grown Al2O3/Ga2O3(Gd2O3)/In0.2Ga0.8As
    Wu, Y. D.
    Lin, T. D.
    Chiang, T. H.
    Chang, Y. C.
    Chiu, H. C.
    Lee, Y. J.
    Hong, M.
    Lin, C. A.
    Kwo, J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03):
  • [8] Structural properties of Ga2O3(Gd2O3)-GaAs interfaces
    Hong, M
    Marcus, MA
    Kwo, J
    Mannaerts, JP
    Sergent, AM
    Chou, LJ
    Hsieh, KC
    Cheng, KY
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1395 - 1397
  • [9] On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts
    Winfried Mönch
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 1444 - 1448
  • [10] On the band-structure lineup at Ga2O3, Gd2O3, and Ga2O3(Gd2O3) heterostructures and Ga2O3 Schottky contacts
    Moench, Winfried
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (02) : 1444 - 1448