Defect-induced Si(100) dimer buckling structures studied by scanning tunneling microscopy

被引：0
|
作者：
Uchikawa, Michihiro [1 ]
Ishida, Masahiko [1 ]
Miyake, Koji [1 ]
Hata, Kenji [1 ]
Yoshizaki, Ryozo [1 ]
Shigekawa, Hidemi [1 ]
机构：
[1] Univ of Tsukuba, Tsukuba, Japan
来源：
Surface Science | 1996年 / 357-358卷 / 1-3期
关键词：
D O I：
Proceedings of the 1995 13th International Vacuum Congress and the 9th International Conference on Solid Surfaces, IVC-13/ICSS-9
中图分类号：
学科分类号：
摘要：
Surface structure
引用
收藏
页码：468 / 471
相关论文
共 50 条
  • [21] Large area dimer vacancy array on the Si(100) surface studied by scanning tunneling microscope
    Yang, HQ
    Zhu, CX
    Gao, JN
    Xue, ZQ
    Pang, SJ
    SURFACE SCIENCE, 1998, 412-13 : 236 - 241
  • [22] Nucleation and growth of CoSi2 on Si(100) studied by scanning tunneling microscopy
    Scheuch, V
    Voigtlander, B
    Bonzel, HP
    SURFACE SCIENCE, 1997, 372 (1-3) : 71 - 82
  • [23] Laser desorption from and reconstruction on Si(100) surfaces studied by scanning tunneling microscopy
    Xu, J
    Overbury, SH
    Wendelken, JF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (02): : 918 - 924
  • [24] Adsorption structures of thiophene on Si(100)-(2 x 1) studied by scanning tunneling microscopy and density functional theory
    Isobe, Naoki
    Shibayama, Tsutomu
    Mori, Yuichiro
    Shobatake, Kosuke
    Sawabe, Kyoichi
    CHEMICAL PHYSICS LETTERS, 2007, 443 (4-6) : 347 - 351
  • [25] Epitaxial growth of ultrathin Si caps on Si(100):B surface studied by scanning tunneling microscopy
    Zhang, Z
    Kulakov, MA
    Bullemer, B
    Eisele, I
    Zotov, AV
    APPLIED PHYSICS LETTERS, 1996, 69 (04) : 494 - 496
  • [26] Atomic structures of defects at GaSe/Si(111) heterointerfaces studied by scanning tunneling microscopy
    Ohta, T
    Klust, A
    Adams, JA
    Yu, QM
    Olmstead, MA
    Ohuchi, FS
    PHYSICAL REVIEW B, 2004, 69 (12)
  • [27] SI(001) DIMER STRUCTURE OBSERVED WITH SCANNING TUNNELING MICROSCOPY
    TROMP, RM
    HAMERS, RJ
    DEMUTH, JE
    PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1303 - 1306
  • [28] Oxide formation on Si(100)-2x1 surfaces studied by scanning tunneling microscopy scanning tunneling spectroscopy
    Ikegami, H
    Ohmori, K
    Ikeda, H
    Iwano, H
    Zaima, S
    Yasuda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1593 - 1597
  • [29] IMAGING OF DIMER ATOMS OF SI(100) WITH THE SCANNING TUNNELING MICROSCOPE
    SUGIHARA, K
    SAKAI, A
    KATO, Y
    AKAMA, Y
    SHODA, N
    TOKUMOTO, H
    ONO, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02): : 707 - 710
  • [30] PHOTOEMISSION AND SCANNING TUNNELING MICROSCOPY ON K/SI(100)
    EFFNER, UA
    BADT, D
    BINDER, J
    BERTRAMS, T
    BRODDE, A
    LUNAU, C
    NEDDERMEYER, H
    HANBUCKEN, M
    SURFACE SCIENCE, 1992, 277 (1-2) : 207 - 219
12345