High-sensitive ultrathin negative electron beam resist based on Langmuir-Blodgett films of polycyanoacrylate

被引：0

作者：

Pisignano, Dario ^{[1
]}

Berzina, Tatiana ^{[2
]}

Erokhin, Victor ^{[2
]}

Fontana, Marco P. ^{[2
]}

Della Torre, Antonio ^{[1
]}

Visconti, Paolo ^{[1
]}

Rinaldi, Ross ^{[1
]}

机构：

[1] C/o Dipto. Ingegneria Innovazione, INFM, University of Lecce, via Arnesano, I-73100 Lecce, Italy

[2] INFM, Department of Physics, University of Parma, Viale delle Scienze, I-43100 Parma, Italy

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2004年 / 43卷 / 6 B期

关键词：

Atomic force microscopy - Deposition - Electron beam lithography - Electron beams - Langmuir Blodgett films - Molecular structure - Monolayers - Nanostructured materials - Nanotechnology - Ultrathin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We carried out an electron-beam lithography study of the sub-μm performances of Langmuir-Blodgett films of Polycyanoacrylates fabricated by the Langmuir-Schaefer technique. We tested the sensitivity of films made by 48 monolayers, finding a dose of less than 1 μC/cm2, and employed them as masks for wet etching of Cr metal layers, with resolutions up to 100nm. These results suggest that the modified Langmuir-Schaefer technique, and the Polycyanoacrylate-based resists, are very promising for nanotechnology applications.

引用

页码：3984 / 3985

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