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- [4] INFLUENCE OF DEEP LEVELS ON THE SPACE-CHARGE CAPACITANCE AND THE FIELD EFFECT IN GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (04): : 469 - 473
- [6] MAGNETORESISTANCE OF UNDOPED N-TYPE GALLIUM ARSENIDE AT LOW TEMPERATURES PHYSICAL REVIEW, 1968, 173 (03): : 794 - &
- [8] CHARACTERIZATION OF UNDOPED n-TYPE LPE GALLIUM ARSENIDE BY HALL, PHOTO-HALL AND PL MEASUREMENTS. 1600, (03): : 9 - 10
- [10] LOW-TEMPERATURE HEAT TREATMENT OF UNDOPED N-TYPE GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1567 - &