ON SPACE-CHARGE SCATTERING IN UNDOPED n-TYPE LPE GALLIUM ARSENIDE.

被引:0
|
作者
Shi, Weiying [1 ]
Yu, Haisheng [1 ]
Zhou, Binglin [1 ]
Zou, Yuanxi [1 ]
Ren, Yaocheng [1 ]
Chen, Zhenxiu [1 ]
机构
[1] Acad Sinica, Shanghai Inst of, Metallurgy, Shanghai, China, Acad Sinica, Shanghai Inst of Metallurgy, Shanghai, China
关键词
D O I
10.1016/0167-577X(84)90041-7
中图分类号
学科分类号
摘要
5
引用
收藏
页码:313 / 314
相关论文
共 50 条
  • [1] FEATURES OF ELECTRON SCATTERING IN UNDOPED GALLIUM ARSENIDE.
    Solov'eva, E.V.
    Mil'vidskii, M.G.
    1972, 6 (05): : 702 - 704
  • [3] EFFECT OF BAKING ON SPACE-CHARGE SCATTERING IN UNDOPED NORMAL-TYPE LPE GAAS
    SHI, HY
    YU, HS
    REN, YC
    ZOU, YX
    CHEN, ZX
    JIANG, YL
    MATERIALS LETTERS, 1986, 4 (5-7) : 290 - 293
  • [4] INFLUENCE OF DEEP LEVELS ON THE SPACE-CHARGE CAPACITANCE AND THE FIELD EFFECT IN GALLIUM ARSENIDE.
    Dmitruk, N.L.
    Tereshchenko, A.K.
    Maeva, O.I.
    Lyashenko, V.I.
    Raskevich, A.M.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (04): : 469 - 473
  • [5] SPACE-CHARGE CURRENTS IN GALLIUM ARSENIDE
    ALLEN, JW
    CHERRY, RJ
    NATURE, 1961, 189 (476) : 297 - &
  • [6] MAGNETORESISTANCE OF UNDOPED N-TYPE GALLIUM ARSENIDE AT LOW TEMPERATURES
    HALBO, L
    SLADEK, RJ
    PHYSICAL REVIEW, 1968, 173 (03): : 794 - &
  • [7] CHARACTERIZATION OF UNDOPED N-TYPE LPE GALLIUM-ARSENIDE BY HALL, PHOTO-HALL AND PL MEASUREMENTS
    SHI, WY
    YU, HH
    ZHOU, BL
    ZOU, YX
    CHOU, YS
    REN, YC
    CHEN, ZX
    WANG, SB
    MATERIALS LETTERS, 1985, 3 (9-10) : 336 - 339
  • [8] CHARACTERIZATION OF UNDOPED n-TYPE LPE GALLIUM ARSENIDE BY HALL, PHOTO-HALL AND PL MEASUREMENTS.
    Shi, Weiying
    Yu, Haisheng
    Zhou, Binglin
    Zou, Yuanxi
    Chou, Tuanhsi
    Ren, Yaocheng
    Chen, Zhenxiu
    Wang, Shaobo
    1600, (03): : 9 - 10
  • [9] SPACE-CHARGE CURRENTS IN N-TYPE GAAS
    YAMASHITA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (01) : 117 - +
  • [10] LOW-TEMPERATURE HEAT TREATMENT OF UNDOPED N-TYPE GALLIUM ARSENIDE
    SOLOVEVA, EV
    LYUTOV, YF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1567 - &