RADICAL GENERATION MECHANISM AND RADICAL EFFECT ON ALUMINUM ANISOTROPIC ETCHING IN SiCl4 REACTIVE ION ETCHING.

被引：0
作者：
Sato, Masaaki [1 ]
Nakamura, Hiroaki [1 ]
Yoshikawa, Akira [1 ]
Arita, Yoshinobu [1 ]
机构：
[1] NTT Electrical Communications Lab, Atsugi, Jpn, NTT Electrical Communications Lab, Atsugi, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 09期
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摘要：
14
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页码：1568 / 1574
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