GaAs FET power amplifiers for PCS applications

被引：0

作者：

机构：

[1] Anon

来源：

| 1600年 / Horizon House, Norwood卷 / 38期

关键词：

Code division multiple access;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

For wireless base station applications, high linearity GaAs FET amplifiers have been developed. The PCS family of amplifiers offers premium performance over the 1.9 to 2 GHz frequency range and at power levels from 5 to 200 W. The PCS 1900 family of high power amplifiers have achieved the required code division multiple access (CDMA) performance by using a high linearity class A GaAs FET design.

引用

共 50 条

[21] LOW NOISE GaAS FET AMPLIFIERS.
Emergy, Frank E.
Microwave Journal, 1977, 20 (06) : 79 - 82
[22] LOW NOISE GaAs FET AMPLIFIERS.
Fukuda, Sachiro
Ara, Youichi
Haga, Isao
NEC Research and Development, 1978, (48): : 67 - 78
[23] LOW-NOISE GAAS FET AMPLIFIERS
FUKUDA, S
ARA, Y
HAGA, I
NEC RESEARCH & DEVELOPMENT, 1978, (48): : 67 - 78
[24] GaAs amplifiers power applications past 18 GHz
不详
MICROWAVES & RF, 1999, 38 (01) : 126 - 126
[25] GaInP/GaAs DHBTs for power amplifiers in wireless applications
Asbeck, PM
Chen, PF
Hanington, G
Hsin, YM
COMPOUND SEMICONDUCTORS 1998, 1999, (162): : 1 - 9
[26] LARGE-SIGNAL CRITERIA FOR THE DESIGN OF GaAs FET DISTRIBUTED POWER AMPLIFIERS.
Ladbrooke, P.H.
1745, (ED-32):
[27] 30 Watt surface-mount power amplifiers for PCS and UMTS applications
Crescenzi, EJ
Griswold, B
Mohammed, A
Buss, R
Pengelly, R
BOSTON 2003 RADIO & WIRELESS RAWCON CONFERENCE, PROCEEDINGS, 2003, : 393 - 396
[28] PLANAR POWER COMBINING FOR MEDIUM POWER GAAS-FET AMPLIFIERS IN X-KU-BANDS
NICLAS, KB
MICROWAVE JOURNAL, 1979, 22 (06) : 79 - 84
[29] 30-WAY RADIAL POWER COMBINER FOR MINIATURE GAAS-FET POWER-AMPLIFIERS
BELOHOUBEK, E
BROWN, R
JOHNSON, H
FATHY, A
BECHTLE, D
KALOKITIS, D
MYKIETYN, E
MICROWAVE JOURNAL, 1986, 29 (05) : 96 - 96
[30] STABILITY OF FET POWER-AMPLIFIERS
ZAVRAZHNOV, YV
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1983, 37-8 (06) : 90 - 92

← 1 2 3 4 5 →