Model-dielectric-function analysis of ion-implanted Si(100) wafers

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作者：
Adachi, Sadao [1 ]
Mori, Hirofumi [1 ]
Takahashi, Mitsutoshi [2 ]
机构：
[1] Department of Electronic Engineering, Faculty of Engineering, Gunma University, Kiryu-shi, Gunma 376-8515, Japan
[2] NTT Telecommun. Energy Laboratories, Atsugi-shi, Kanagawa 243-0198, Japan
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| 1600年 / American Institute of Physics Inc.卷 / 93期
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