Si/Pt ohmic contacts to p-type 4H-SiC

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 14卷 / 2009期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Thermal stability study of n-type and p-type ohmic contacts simultaneously formed on 4H-SiC
    Zhang, Yimeng
    Guo, Tao
    Tang, Xiaoyan
    Yang, Jie
    He, Yanjing
    Zhang, Yuming
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 731 : 1267 - 1274
  • [32] Simultaneous Formation of Ni/Al Ohmic Contacts to Both n- and p-Type 4H-SiC
    Kazuhiro Ito
    Toshitake Onishi
    Hidehisa Takeda
    Kazuyuki Kohama
    Susumu Tsukimoto
    Mitsuru Konno
    Yuya Suzuki
    Masanori Murakami
    Journal of Electronic Materials, 2008, 37
  • [33] Simultaneous formation of Ni/Al ohmic contacts to both n- and p-type 4H-SiC
    Ito, Kazuhiro
    Onishi, Toshitake
    Takeda, Hidehisa
    Kohama, Kazuyuki
    Tsukimoto, Susumu
    Konno, Mitsuru
    Suzuki, Yuya
    Murakami, Masanori
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (11) : 1674 - 1680
  • [34] Low resistance TiAl ohmic contacts with multi-layered structure for p-type 4H-SiC
    Nakatsuka, O
    Takei, T
    Koide, Y
    Murakami, M
    MATERIALS TRANSACTIONS, 2002, 43 (07) : 1684 - 1688
  • [35] Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC
    Alessia Frazzetto
    Filippo Giannazzo
    Raffaella Lo Nigro
    Salvatore Di Franco
    Corrado Bongiorno
    Mario Saggio
    Edoardo Zanetti
    Vito Raineri
    Fabrizio Roccaforte
    Nanoscale Research Letters, 6
  • [36] Electrical properties and microstructure of ternary Ge/Ti/Al ohmic contacts to p-type 4H-SiC
    Tsukimoto, S
    Sakai, T
    Murakami, M
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) : 4976 - 4981
  • [37] Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC
    Frazzetto, Alessia
    Giannazzo, Filippo
    Lo Nigro, Raffaella
    Di Franco, Salvatore
    Bongiorno, Corrado
    Saggio, Mario
    Zanetti, Edoardo
    Raineri, Vito
    Roccaforte, Fabrizio
    NANOSCALE RESEARCH LETTERS, 2011, 6
  • [38] Ni-Al ohmic contact to p-type 4H-SiC
    Vang, H.
    Lazar, M.
    Brosselard, P.
    Raynaud, C.
    Cremillieu, P.
    Leclercq, J. -L.
    Bluet, J. -M.
    Scharnholz, S.
    Planson, D.
    SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) : 626 - 631
  • [39] Titanium-based ohmic contact on p-type 4H-SiC
    Jung, KH
    Cho, NI
    Lee, JH
    Yang, SJ
    Kim, CK
    Lee, BT
    Rim, KH
    Kim, NK
    Kim, ED
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 913 - 916
  • [40] Nickel ohmic contacts to p- and n-type 4H-SiC
    Fursin, LG
    Zhao, JH
    Weiner, M
    ELECTRONICS LETTERS, 2001, 37 (17) : 1092 - 1093
12345