EQUILIBRIUM DISTRIBUTIONS OF THE POTENTIAL AND OF THE CARRIER IN THE INVERSION LAYER.

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作者：

Chen Xiangxun

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来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 1981年 / 2卷 / 02期

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摘要：

Analytical expressions are developed for the thermal equilibrium distributions of the potential and of the carrier in a nondegenerate inversion layer. The results are in good agreement with the precise numerical values obtained with a computer. These analytical results can be used to obtain easily other important quantities of inversion layers of this kind.

引用

页码：128 / 133

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