CVD PROCESS TRENDS.

被引:0
作者
Robinson, Robert J.
机构
来源
Technical Report - Johns Hopkins University, Department of Earth & Planetary Sciences, Series C | 1979年 / 2卷 / 02期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
SEMICONDUCTING SILICON
引用
收藏
页码:27 / 28
相关论文
共 50 条
  • [41] RPCNET - STATUS AND TRENDS
    CANESCHI, F
    FERRO, E
    LENZINI, L
    MARTELLI, M
    MENCHI, C
    SOMMANI, M
    TARINI, F
    ALTA FREQUENZA, 1979, 48 (08): : 523 - 530
  • [42] TRENDS IN TIRE TECHNOLOGY
    KNILL, RB
    CHEMTECH, 1981, 11 (11) : 688 - 692
  • [43] Trends in structural engineering
    Krishna, Prem
    Iyer, Nagesh R.
    Journal of Structural Engineering (India), 2023, 49 (06): : 463 - 470
  • [44] Effect of argon addition on single crystal diamond synthesized by microwave plasma CVD
    Hubei Province Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, Wuhan, China
    不详
    Rengong Jingti Xuebao, 2 (337-341):
  • [45] Silicon Epitaxy at Low Temperature Using Plasma-enhanced CVD.
    Pons, M.
    Bourgeat, D.
    Trilhe, J.
    Bourdon, B.
    Vide, 1980, 35 (200): : 3 - 12
  • [46] Electrical characterisation of high-k materials prepared by atomic layer CVD
    Carter, R.J.
    Cartier, E.
    Caymax, M.
    De Gendt, S.
    Degraeve, R.
    Groeseneken, G.
    Heyns, M.
    Kauerauf, T.
    Kerber, A.
    Kubicek, S.
    Lujan, G.
    Pantisano, L.
    Tsai, W.
    Young, E.
    Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001, 2001, : 94 - 99
  • [47] PLASMA-HYDROGENATION EFFECTS IN DOPED CVD AMORPHOUS SILICON FILMS.
    Hasegawa, Seiichi
    Ando, Daizo
    Kurata, Yoshihiro
    Shimizu, Tatsuo
    1983, (22):
  • [48] California Water Rate Trends
    Gaur, Sanjay
    Atwater, Drew
    JOURNAL AMERICAN WATER WORKS ASSOCIATION, 2015, 107 (01): : 51 - 58
  • [49] TRENDS IN SOFTWARE PORTABILITY.
    Thalmann, Daniel
    Annual Airlines Plating and Metal Finishing Forum, 1980, : 51 - 53
  • [50] CALL in China and its trends
    He, Gaoda
    Advances in Intelligent and Soft Computing, 2012, 133 AISC : 347 - 353