InP/InGaAs DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTORS GROWN BY MBE.

被引：0
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作者：
Schuitemaker, P. [1 ]
Claxton, P.A. [1 ]
Roberts, J.S. [1 ]
Plant, T.K. [1 ]
Houston, P.A. [1 ]
机构：
[1] Univ of Sheffield, Sheffield, Engl, Univ of Sheffield, Sheffield, Engl
来源：
| 1600年 / 22期
关键词：
CURRENT GAINS - DOUBLE HETEROSTRUCTURE - MBE - SELECTIVE ETCHING;
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