NEW ENERGY MODEL FOR THE CALCULATION OF THE SURFACE RECONSTRUCTION OF III-V SEMICONDUCTORS: APPLICATION TO THE GaAs (110) SURFACE.

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作者：
Toet, S.E. [1 ]
Lenstra, D. [1 ]
机构：
[1] Eindhoven Univ of Technology, Eindhoven, Neth, Eindhoven Univ of Technology, Eindhoven, Neth
来源：
Applied Physics A: Solids and Surfaces | 1987年 / A43卷 / 02期
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摘要：
19
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页码：85 / 89
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