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- [1] A NEW ENERGY-MODEL FOR THE CALCULATION OF THE SURFACE RECONSTRUCTION OF III-V SEMICONDUCTORS - APPLICATION TO THE GAAS(110) SURFACEAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (02): : 85 - 89TOET, SELENSTRA, D
- [2] (110) SURFACE STATES IN III-V AND II-VI ZINCBLENDE SEMICONDUCTORSPHYSICAL REVIEW B, 1976, 13 (02): : 826 - 834CHELIKOWSKYJRCOHEN, ML
- [3] Identification of surface anion antisite defects in (110) surfaces of III-V semiconductorsAPPLIED PHYSICS LETTERS, 2001, 79 (18) : 2877 - 2879Ebert, PQuadbeck, PUrban, KHenninger, BHorn, KSchwarz, GNeugebauer, JScheffler, M
- [4] TUNNELING SPECTROSCOPY OF THE (110)-SURFACE OF DIRECT-GAP III-V SEMICONDUCTORSPHYSICAL REVIEW B, 1994, 50 (07): : 4561 - 4570FEENSTRA, RM
- [5] INTRINSIC SURFACE STATES OF (110) SURFACES OF GROUP IV AND III-V SEMICONDUCTORSPHYSICAL REVIEW B, 1974, 10 (12): : 5075 - 5081JOANNOPOULOS, JDCOHEN, ML
- [6] NEW SURFACE ATOMIC STRUCTURES FOR COLUMN-V OVERLAYERS ON THE (110) SURFACES OF III-V COMPOUND SEMICONDUCTORSJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 888 - 895LAFEMINA, JPDUKE, CBMAILHIOT, C
- [7] Surface passivation of III-V compound semiconductors1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 275 - 282Kapila, AMalhotra, V
- [8] SURFACE CORE EXCITONS IN III-V SEMICONDUCTORSJOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 388 - 389DAW, MSSMITH, DLMCGILL, TC
- [9] CALCULATION OF THE ATOMIC GEOMETRIES OF THE (110) SURFACES OF III-V COMPOUND SEMICONDUCTORSSURFACE SCIENCE, 1985, 149 (2-3) : 366 - 380MAILHIOT, CDUKE, CBCHADI, DJ