Sulfide-assisted reordering at the InP surface and SiNx/InP interface

被引:0
|
作者
Kwok, R.W.M.
Jin, G.
So, B.K.L.
Hui, K.C.
Huang, L.
Lau, W.M.
Hsu, C.C.
Landheer, D.
机构
来源
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | 1995年 / 13卷 / 3 pt 1期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] AMORPHOUS SI AS AN INTERFACIAL CONTROL LAYER FOR SINX/INP
    KWOK, RWM
    LAU, WM
    INGREY, S
    LANDHEER, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 754 - 758
  • [22] Thermally induced improvements on SiNx:H/InP devices
    Redondo, E
    Blanco, N
    Mártil, I
    González-Díaz, G
    Pelaez, R
    Deuñas, S
    Castán, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04): : 2178 - 2182
  • [23] Surface of n-type InP (100) passivated in sulfide solutions
    V. N. Bessolov
    M. V. Lebedev
    D. R. T. Zahn
    Semiconductors, 1999, 33 : 416 - 420
  • [24] ORIGIN OF SURFACE AND METAL-INDUCED INTERFACE STATES IN INP
    SHAPIRA, Y
    BRILLSON, LJ
    HELLER, A
    PHYSICAL REVIEW B, 1984, 29 (12): : 6824 - 6832
  • [25] PHOTOSENSITIVITY OF SURFACE-BARRIER INP STRUCTURES WITH MICRORELIEF INTERFACE
    BASYUK, EV
    DMITRUK, NL
    MAEVA, OI
    SEMICONDUCTORS, 1993, 27 (03) : 232 - 235
  • [26] Cadmium sulfide surface stabilization for InP-based optoelectronic devices
    Vaccaro, K
    Davis, A
    Dauplaise, HM
    Spaziani, SM
    Martin, EA
    Lorenzo, JP
    JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (04) : 603 - 609
  • [27] EFFECTS OF INP SURFACE-TREATMENT ON THE ELECTRICAL-PROPERTIES AND STRUCTURES OF AIN/N-INP INTERFACE
    FUJIEDA, S
    AKIMOTO, K
    HIROSAWA, I
    MIZUKI, J
    MATSUMOTO, Y
    MATSUI, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (01): : L16 - L18
  • [28] Surface of n-type InP (100) passivated in sulfide solutions
    Bessolov, VN
    Lebedev, MV
    Zahn, DRT
    SEMICONDUCTORS, 1999, 33 (04) : 416 - 420
  • [29] CHARACTERISTICS OF SINX/INP/IN0.53GA0.47AS/INP HETEROSTRUCTURE INSULATED GATE (HIG)FETS WITH AN IN2S3 INTERFACE CONTROL LAYER
    SUNDARARAMAN, CS
    CURRIE, JF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (06) : 1197 - 1199
  • [30] Studies on ferroelectric InP interface
    Sonia, G
    Kumar, MS
    Arivuoli, D
    Kumar, J
    Baskar, K
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 236 - 239