Sulfide-assisted reordering at the InP surface and SiNx/InP interface

被引:0
|
作者
Kwok, R.W.M.
Jin, G.
So, B.K.L.
Hui, K.C.
Huang, L.
Lau, W.M.
Hsu, C.C.
Landheer, D.
机构
来源
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | 1995年 / 13卷 / 3 pt 1期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] SULFIDE-ASSISTED REORDERING AT THE INP SURFACE AND SINX/INP INTERFACE
    KWOK, RWM
    JIN, G
    SO, BKL
    HUI, KC
    HUANG, L
    LAU, WM
    HSU, CC
    LANDHEER, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 652 - 657
  • [2] N2 remote plasma cleaning of InP to improve SiNx:H/InP interface performance
    Redondo, E
    Blanco, MN
    Mártil, I
    González-Díaz, G
    MICROELECTRONICS RELIABILITY, 2000, 40 (4-5) : 837 - 840
  • [3] Sulfide Passivation of InP(100) Surface
    Lebedev, M. V.
    Serov, Yu. M.
    Lvova, T. V.
    Sedova, I. V.
    Endo, R.
    Masuda, T.
    SEMICONDUCTORS, 2020, 54 (14) : 1843 - 1846
  • [4] Sulfide Passivation of InP(100) Surface
    M. V. Lebedev
    Yu. M. Serov
    T. V. Lvova
    I. V. Sedova
    R. Endo
    T. Masuda
    Semiconductors, 2020, 54 : 1843 - 1846
  • [5] PERFORMANCE OF INTERFACE ENGINEERED SINX/ICL/INP/IN0.53GA0.47AS/INP DOPED CHANNEL HIGFETS
    SUNDARARAMAN, CS
    CURRIE, JF
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (12) : 554 - 556
  • [6] Interface state densities for SiNx:H on cleaved GaAs and InP(110)
    Landheer, D.
    Hulse, J.E.
    Rajesh, K.
    Materials Research Society Symposium - Proceedings, 1999, 573 : 253 - 258
  • [7] STUDIES OF INP SURFACE AND INP-INSULATOR INTERFACE BY SPECTRAL PHOTOLUMINESCENCE
    LEYRAL, P
    BOUREDOUCEN, H
    COMMERE, B
    KRAWCZYK, S
    JOURNAL OF LUMINESCENCE, 1988, 40-1 : 753 - 754
  • [8] Interface state densities for SiNx:H on cleaved GaAs and InP(110)
    Landheer, D
    Hulse, JE
    Rajesh, K
    COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 253 - 258
  • [9] C–V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N2 remote plasma cleaning of the InP surface
    H. Castán
    S. Dueñas
    J. Barbolla
    E. Redondo
    I. Mártil
    G. González-Díaz
    Journal of Materials Science: Materials in Electronics, 2001, 12 : 263 - 267
  • [10] C-V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N2 remote plasma cleaning of the InP surface
    Castán, H
    Dueñas, S
    Barbolla, J
    Redondo, E
    Mártil, I
    González-Díaz, G
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2001, 12 (4-6) : 263 - 267