On the determination of the interface density of states in a-Si:H/ a-Si1-xCx:H multilayers

被引：0

作者：

Bertomeu, J. ^{[1
]}

Puidgollers, J. ^{[1
]}

Asensi, J.M. ^{[1
]}

Andreu, J. ^{[1
]}

机构：

[1] Univ de Barcelona, Barcelona, Spain

来源：

Journal of Non-Crystalline Solids | 1993年 / 164-66卷 / pt 2期

关键词：

Amorphous materials - Characterization - Interfaces (materials) - Silicon - Silicon carbide - Solid state physics - Spectroscopic analysis;

D O I：

10.1016/0022-3093(93)91133-N

中图分类号：

学科分类号：

摘要：

This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of a-Si:H/ a-Si1-xCx:H multilayers, and a new approach in the treatment of experimental data is used in order to obtain accurate results. From this approach, an upper limit of 1010 cm-2 is determined for the interface density of states.

引用

页码：861 / 864