PECULIARITIES OF THE FLICKER NOISE OF SILICON FIELD EMITTERS.

被引：0

作者：

Bakhtizin, R.Z.

Gots, S.S.

机构：

来源：

Radio engineering & electronic physics | 1980年 / 25卷 / 01期

关键词：

ELECTRONS - Emission - SEMICONDUCTING SILICON;

D O I：

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学科分类号：

摘要：

Some results of a study of the noise of silicon field emitters are presented. The basic experiments were performed on p-type crystals with a resistivity of 2000 ohm. cm in a vacuum of 10** minus **9 torr. The I-V characteristics of these field emitters are highly nonlinear and have a characteristic light-sensitive saturation region. Considering the low noise level of electron field emission, a noise meter was built employing a zero modulation radiometer scheme.

引用

页码：139 / 141