VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN cw LASER ANNEALED VIRGIN SILICON.

Cw laser annealing and deep level transient spectroscopy were combined to study quenched-in defects in silicon. The well known phosphorus-vacancy complex (E-center) is experimentally identified as one product of these quenching experiments. The effect of the laser scan speed on the spatial depth profile of this defect is used to get insight into the physical processes involved. The results are interpreted in terms of a simple vacancy-diffusion model, providing estimates for the equilibrium E-center concentration and the vacancy diffusivity at high temperature.