Photoluminescence and cathodoluminescence investigation of optical properties of InP-based InGaAs ridge quantum wires formed by selective molecular beam epitaxy

被引：0

作者：

Fujikura, Hajime ^{[1
]}

Hasegawa, Hideki ^{[1
]}

机构：

[1] Hokkaido Univ, Sapporo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 2 B期

关键词：

Cathodoluminescence - Energy gap - Epitaxial growth - Light emission - Molecular beam epitaxy - Optical properties - Photoluminescence - Scanning electron microscopy - Semiconducting indium compounds - Semiconducting indium phosphide - Semiconductor quantum wells - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Optical properties of InP-based InGaAs ridge quantum wires formed by selective molecular beam epitaxy (MBE) growth were characterized in detail by using cathodoluminescence (CL) and photoluminescence (PL). Both the CL and PL spectra had strong emission peaks with narrow widths. Spot-excited CL images confirmed that these peaks originated from ridge quantum wires. Depending on the excitation power, emission peaks showed energy shift and half-width change due to band filling. Temperature dependence of the PL emission peak followed that of the energy gap. The PL intensity decreased with increasing temperature, but was still fairly intense at room temperature. The behavior of PL intensity change with temperature was found to be the same for wires and reference wells, indicating the presence of a common nonradiative recombination mechanism.

引用

页码：1333 / 1339